AC/DC Rectification With Indium Gallium Oxide Thin-Film Transistors

作者：McFarlane Brian R^*; Kurahashi Peter; Heineck Daniel P; Presley Rick E; Sundholm Eric; Wager John F

来源：IEEE Electron Device Letters, 2010, 31(4): 314-316.

DOI：10.1109/LED.2010.2042424

• Amorphous semiconductors
• rectifiers
• thin-film transistors (TFTs)

Two circuits to accomplish ac/dc rectification using thin-film transistors (TFTs) based on amorphous oxide semiconductors are presented. The TFTs are implemented using either indium gallium oxide or zinc tin oxide as the channel layer material. One circuit is a full-bridge configuration while the second uses a cross-tied configuration to increase the output voltage. With an input of 7.07 V(rms) at a frequency of 1 MHz, output voltages of similar to 9 and similar to 10.5 V, respectively, are observed. With a channel length of 15 mu m, successful operation up to 20 MHz is demonstrated.

• 出版日期2010-4