Binding energy of localized biexcitons in AlGaN-based quantum wells

作者:Hayakawa Yuya; Fukuno Tomonori; Nakamura Katsuto; Miyake Hideto; Hiramatsu Kazumasa; Yamada Yoichi*
来源:Applied Physics Express, 2014, 7(12): 122101.
DOI:10.7567/APEX.7.122101

摘要

The excitonic optical properties of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells were studied by photoluminescence (PL) and PL excitation spectroscopies at room temperature. The binding energy of localized biexcitons in quantum wells was evaluated to be 136meV on the basis of the energy separation between the exciton resonance and the two-photon biexciton resonance. This value was 2.4 times larger than the biexciton binding energy of 56meV in an Al0.61Ga0.39N ternary alloy epitaxial layer with almost the same aluminum composition as the quantum-well layers. This increase unambiguously resulted from the effect of quantum confinement on biexcitons.

  • 出版日期2014-12