Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction

作者：Zhu Shiyang^*; Li M F

来源：Solid-State Electronics, 2006, 50(7-8): 1337-1340.

DOI：10.1016/j.sse.2006.05.023

• Schottky barrier source/drain
• strained-Si
• silicide
• Schottky barrier height

Due to an extra barrier between source and channel, the drivability of Schottky barrier source/drain MOSFETs (SBMOSFETs) is smaller than that of conventional transistors. To reach the drivability comparable to the conventional MOSFET, the Schottky barrier height (SBH) should be lower than a critical value. It is expected that SBH can be effectively reduced by a bi-axially strain on Si. In this letter, p-channel MOSFETs with PtSi Schottky barrier source/drain, HfAlO gate dielectric, HfN/TaN metal gate and strained-Si channel are demonstrated for the first time using a simplified low temperature process. Devices with the channel length of 4 mu m have the drain current of 9.5 mu A/mu m and the transconductance of 14 mu S/mu m at V-gs - V-th = V-ds = -1 V. Compared to the cubic Si counterpart, the drain current and the transconductance are improved up to 2.7 and 3.1 times respectively. The improvement is believed to arising from the reduced barrier height of the PtSi/strained-Si contact and the enhanced hole mobility in the strained-Si channel.

• 出版日期2006-8
• 单位复旦大学