Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy

作者：Shafi M; Mari R H; Khatab A; Henini M^*; Polimeni A; Capizzi M; Hopkinson M

来源：Journal of Applied Physics, 2011, 110(12): 124508.

DOI：10.1063/1.3664823

Dilute nitride GaAs1-xNx layers have been grown by molecular beam epitaxy with nitrogen concentration ranging from 0.2% to 0.8%. These samples have been studied before and after hydrogen irradiation by using standard deep level transient spectroscopy (DLTS) and high resolution Laplace DLTS techniques. The activation energy, capture cross section and density of the electron traps have been estimated and compared with results obtained in N-free as-grown and H-irradiated bulk GaAs.

• 出版日期2011-12-15