Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

作者:Chen Charlton J*; Husko Chad A; Meric Inanc; Shepard Ken L; Wong Chee Wei; Green William M J; Vlasov Yurii A; Assefa Solomon
来源:Applied Physics Letters, 2010, 96(8): 081107.
DOI:10.1063/1.3308492

摘要

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (redshift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive postfabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

  • 出版日期2010-2-22
  • 单位IBM