科研之友
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摘要
A quantum-well design for controlling carrier dynamics was investigated for high-speed direct-modulation semiconductor lasers. The proposed well-in-well (WWell) structure decreases the carrier relaxation time into an active well by designing the wave function that is related to longitudinal optical phonon scattering rate. The electron relaxation time was analyzed numerically and was estimated to become 1/2-1/10 times smaller than that of a conventional quantum-well structure. This reduction of the relaxation time is effective for reducing the optical gain damping. The advantage of an asymmetrical WWell structure is also shown.
- 出版日期2011-8
