Dual functional modification by N doping of Ta2O5: p-type conduction in visible-light-activated N-doped Ta2O5

作者：Morikawa Takeshi^*; Saeki Shu; Suzuki Tomiko; Kajino Tsutomu; Motohiro Tomoyoshi

来源：Applied Physics Letters, 2010, 96(14): 142111.

DOI：10.1063/1.3386532

• electrochemical electrodes
• energy gap
• nitrogen
• photoconductivity
• photoelectrochemistry
• red shift
• semiconductor doping
• semiconductor materials
• semiconductor thin films
• tantalum compounds

We report dual functional modulation, both p-type conduction and band gap narrowing, of Ta2O5 semiconductor induced by heavy doping of nitrogen in films sputtered in N-2/Ar mixture and ammonia-treated powders. The N doping induced a redshift in the optical absorption edge from 320 to 500 nm, resulting in the absorption of visible light. Simultaneously, the N doping caused a change in the conduction from n-type to p-type. As a result, the N-Ta2O5 photoelectrode containing 7.6 or 16.1 at. % of N exhibited a distinct cathodic photocurrent (due to p-type conduction) in solutions under visible light irradiation (>410 nm).

• 出版日期2010-4-5