A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

作者：Zomer P J^*; Dash S P; Tombros N; van Wees B J

来源：Applied Physics Letters, 2011, 99(23): 232104.

DOI：10.1063/1.3665405

We present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride. We extract mobilities as high as 125 000 cm(2) V-1 s(-1) at room temperature and 275 000 cm(2) V-1 s(-1) at 4.2 K. The excellent quality is supported by the early development of the v = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4.2 K. We also present a fast, simple, and accurate transfer technique of graphene to hexagonal boron nitride crystals. This technique yields atomically flat graphene on boron nitride which is almost completely free of bubbles or wrinkles. The potential of commercially available boron nitride combined with our transfer technique makes high mobility graphene devices more accessible.

• 出版日期2011-12-5