Ab initio modeling of zincblende AlN layer in Al-AlN-TiN multilayers

作者：Yadav S K^*; Wang J; Liu X Y^*

来源：Journal of Applied Physics, 2016, 119(22): 224304.

DOI：10.1063/1.4953593

An unusual growth mechanism of metastable zincblende AlN thin film by diffusion of nitrogen atoms into Al lattice is established. Using first-principles density functional theory, we studied the possibility of thermodynamic stability of AlN as a zincblende phase due to epitaxial strains and interface effect, which fails to explain the formation of zincblende AlN. We then compared the formation energetics of rocksalt and zincblende AlN in fcc Al through direct diffusion of nitrogen atoms to Al octahedral and tetrahedral interstitials. The formation of a zincblende AlN thin film is determined to be a kinetically driven process, not a thermodynamically driven process. Published by AIP Publishing.

• 出版日期2016-6-14
• 单位Los Alamos