Modeling of amorphous InGaZnO(4) thin film transistors and their subgap density of states

作者：Hsieh Hsing Hung; Kamiya Toshio; Nomura Kenji; Hosono Hideo^*; Wu Chung Chih

来源：Applied Physics Letters, 2008, 92(13): 133503.

DOI：10.1063/1.2857463

We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO(4) (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.

• 出版日期2008-3-31
• 单位中国科学院电工研究所