Degradation of magnetic tunneling junctions caused by pinhole formation and growth

作者：Xi Haiwen^*; Franzen Scott; Guzman Javier I; Mao Sining

来源：Journal of Magnetism and Magnetic Materials, 2007, 319(1-2): 60-63.

DOI：10.1016/j.jmmm.2007.04.032

• magnetic tunneling junctions
• magnetoresistance
• resistance degradation
• pinholes

A theory is developed to describe the pinhole formation and growth in magnetic tunneling junctions (MTJs) using the Kolmogorov-Avrami (KA) model. The theory relates the pinhole dynamics and the gradual degradation of the imperfect barrier layers and then the magnetic junctions under external stress. Form this study, analytical expressions of junction resistance and magnetoresistive (MR) ratio as functions of time are provided to characterize the junction degradation.

• 出版日期2007-12