NiSi and Ni(Pd)Si as possible interconnect and electrode materials for film bulk acoustic resonators and microelectromechanical systems

作者：Karabko Aliaksandra^*; Dragasius Egidijus

来源：Journal of Vibroengineering, 2013, 15(1): 196-203.

• film bulk acoustic resonators (FBAR)
• IC compatible
• MEMS
• NiSi
• Ni(Pd)Si
• morphological stability
• thermal stability

This paper presents comparison of properties of NiSi and Ni(Pd)Si for possible application as interconnect and electrode materials for film bulk acoustic resonators (FBAR) and microelectromechanical systems (MEMS). A number of silicide phases including monosilicide and disilicide phases are found to be formed at various temperatures depending on the composition of the annealed film. The addition of palladium is proved to delay nickel disilicide phase formation which results in a lower sheet resistance at higher temperatures and the possibility to use this material as low resistance interconnect or electrode material rather than pure nickel silicide. At the same time the surface morphology of nickel palladium silicide is found to be more homogeneous, with smaller grain sizes and more uniform alignment of grains in the film, altogether providing the better options for perspective application in FBARs and MEMS, compatible with silicon microelectronics.

• 出版日期2013-3