科研之友
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摘要
Molecular dynamics simulations were performed to study the interaction between atomic hydrogen and silicon carbide. In the present study, we focus on the effect of the surface temperature on H interacting with silicon carbide. The simulation results show that the retention of H atoms in the sample decreases linearly with increasing surface temperature. The depth profile analysis shows that the sample is modified by H bombardment, and the density of H atoms is greater than those of Si and C atoms near the interface region between the H-containing region and the bulk. However, near the surface region the densities of H, Si and C atoms are almost equivalent. In the modified layer, the bonds consist of Si-C and Si-H and C-H. The fraction of Si-C bonds is the greatest. Only a few C-H bonds are present.
