Study of high-quality (11-22) semi-polar GaN grown on nanorod templates

作者：Xu B; Yu X; Gong Y; Xing K; Bai J; Wang T^*

来源：Physica Status Solidi (B) Basic Research, 2015, 252(5): 1079-1083.

DOI：10.1002/pssb.201451490

• epitaxial overgrowth
• nanorods
• sapphire
• semi-polar GaN
• X-ray diffraction

(11-22) semi-polar GaN overgrown on nanorod templates with different nanorod diameters has been systematically studied in terms of crystal quality, strain relaxation, wafer bowing and electrical properties. With increasing nanorod diameter from 300 to 827 nm, the full width at half maximum (FWHM) of the X-ray rocking curve reduces from 0.20 degrees to 0.15 degrees along (1-100) direction and from 0.15 degrees to 0.10 degrees along (11-2-3) direction, respectively. The strain relaxation of the overgrown GaN layers has been significantly enhanced, leading to a reduction in wafer bowing from 0.029 degrees to 0.0091 cm(-1). The electron mobility in the overgrown GaN layers increases from 83 to 228 cmV(-1) s(-1) and from 52 to 124 cmV(-1) s(-1) along (1-100) and (11-2-3) directions, respectively.

• 出版日期2015-5