Diluted ferromagnetic semiconductor in a Cr-based MnTe thin film

作者：Kim Sam Jin^*; Kim Woochul; Bae Sung Hwan; Kim Chul Sung; Moon Jungbum; Jung Myung Hwa; Kim Kwang Joo

来源：Journal of the Korean Physical Society, 2008, 52(2): 492-495.

• magnetic device materials
• diluted magnetic semiconductor
• MnTe film
• ferromagnetic semiconductor
• magneto resistance
• spintronic application

Mn1-xCrxTe (x = 0.05, 0.1, 0.15); a single phase of high crystalline quality, was successfully grown on a Si(100):B substrate by using molecular beam epitaxy (MBE). An investigation on the magnetic and the electric transport properties of the Mn1-x,CrxTe (x = 0.05, 0.1, 0.15) films shows ferromagnetic properties unlike antiferromagnetic bulk MnTe materials. The temperature dependence of the magnetic susceptibility in the film with x = 0.10 exhibits a sharp ferromagnetic transitions at around 175 K. An obvious semiconducting behavior is shown in the temperature range from 20 K up to 300 K. Our X-ray results and magnetization data have verified the ferromagnetism for preparing Cr-cluster-free magnetic semiconductor thin films as candidate materials for potential spintronic applications.

• 出版日期2008-2