Comparison of field-effect transistors on polycrystalline and single-crystal diamonds

作者：Wang, Jing Jing; He, Ze Zhao; Yu, Cui; Song, Xu Bo; Wang, Hong Xing; Lin, Fang; Feng, Zhi Hong^*

来源：Diamond and Related Materials, 2016, 70: 114-117.

DOI：10.1016/j.diamond.2016.10.016

• Diamond film
• p-Type channel
• RF output power
• High frequency electronics

High quality diamond epitaxial layers are prepared on polycrystalline and single-crystal diamonds by MPCVD. Field-effect transistors with gate length of 1 pm are fabricated by self-aligned process on them. The surface p-type channel of the diamond films were obtained by microwave hydrogen plasma treatment. The DC and RF characteristics of the field-effect transistors are compared. The polycrystalline diamond FETs show better DC and small-signal performance. Single-crystal diamond FETs show higher breakdown voltage and output power density due to its high crystal quality. The maximum output power density reaches 320 mW/mm and 450 mW/mm@1GHz for the polycrystalline diamond and single crystal diamond transistors, respectively.

• 出版日期2016-11
• 单位西安交通大学