Dynamic Charge Centroid on Data Retention of Double-Nanostructure Nonvolatile Memory

作者：Wang Jer Chyi^*; Lin Chih Ting; Chen Chia Hsin; Huang Po Wei; Lai Chao Sung

来源：Applied Physics Express, 2012, 5(4): 044201.

DOI：10.1143/APEX.5.044201

Dynamic charge centroid on retention characteristics of nonvolatile memories with double nanostructures (DNSs), gadolinium oxide nanocrystal (Gd2O3-NC), and hafnium oxide charge-trapping layer (HfO2-CTL) was investigated. Compared with the conventional Gd2O3-NC memory, the DNS memories exhibited superior data retention. In addition, the DNS memory with thicker HfO2-CTL presented more charge loss because the trapped charge centroid was located close to the HfO2/tunneling layer interface. The tendency of charge loss was consistent with the dynamic charge centroid at the low-flat-band-voltage shift region, indicating that the charge centroid location was important for the data retention of DNS nonvolatile memories.

• 出版日期2012-4
• 单位长春大学