Azo Anion Radical Complex of Rhodium as a Molecular Memory Switching Device: Isolation, Characterization, and Evaluation of Current-Voltage Characteristics

作者:Paul Nanda D; Rana Utpal; Goswami Sreetosh; Mondal Tapan K; Goswami Sreebrata
来源:Journal of the American Chemical Society, 2012, 134(15): 6520-6523.
DOI:10.1021/ja212197s

摘要

Two rare examples of azo anion diradical complexes of Rh(III) are reported. These complexes showed excellent memory switching properties with a large ON/OFF ratio and are suitable for RAM/ROM applications. Their electronic structures have been elucidated using a host of physical methods, including Xray crystallography, variable-temperature magnetic susceptibility measurement, cyclic voltammetry, electron paramagnetic resonance spectroscopy, and density functional theory. The results indicate a predominant triplet state description of the systems with two ferromagnetically coupled radicals.

  • 出版日期2012-4-18