Are Al2O3 and MgO tunnel barriers suitable for spin injection in graphene?

作者：Dlubak B^*; Seneor P; Anane A; Barraud C; Deranlot C; Deneuve D; Servet B; Mattana R; Petroff F; Fert A

来源：Applied Physics Letters, 2010, 97(9): 092502.

DOI：10.1063/1.3476339

We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al2O3 and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman. spectroscopy. This study reveals that for Al2O3 growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.

• 出版日期2010-8-30