科研之友
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摘要
The growth of low temperature aluminum oxide gate dielectric on a plastic substrate is explored for flexible device application. Single-crystal-transferred-silicon is used as a channel layer. A plasma-deposited interfacial oxide layer is found beneficial for better device performances. Additional forming gas annealing also improved contact resistance and resulted in better passivation of defect sites, hence, enhanced performances. High mobility, high on current with large on-off ratio and low threshold voltage was achieved. The flexibility of the device is also reported. Devices show nearly no changes in electrical properties after bending the device to a strain value of up to 0.3%, corresponding to a bending radius of 4 mm.
- 出版日期2010-5
