摘要

The article discusses how bonding concepts have allowed the development of amorphous semiconductors, in particular the 8-N rule of bonding, the doping mechanism in a-Si:H, the weak effect of disorder on s states in amorphous oxide semiconductors, the strong effect of disorder on p states in amorphous carbon, and the effect of the change from resonant bonding to simple molecular covalent bonding in chalcogenide phase change materials.

  • 出版日期2016-7