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摘要
InSb is known to have the highest electron mobility among all III-V binary compounds, and is thus considered as a candid ate channel material for future nanoscale FET devices. In this paper, two-dimensional bandstructures of (100) oriented InSb ultrathin bodies are calculated using an atomistic approach based on the sp(3)d(5)s* tight-binding model. Key parameters, including energy bandgap, density of states, and carrier effective masses, are extracted from bandstructures obtained numerically. These parameters can further be used as inputs for channel mobility simulation.
- 出版日期2007-1
- 单位清华大学
