An 80 GHz High Gain Double-Balanced Active Up-Conversion Mixer Using 0.18 mu m SiGe BiCMOS Technology

作者：Chen Austin Ying Kuang^*; Baeyens Yves; Chen Young Kai; Lin Jenshan

来源：IEEE Microwave and Wireless Components Letters, 2011, 21(6): 326-328.

DOI：10.1109/LMWC.2011.2140095

• BiCMOS
• double-balanced
• millimeter-wave
• silicon-germanium (SiGe)
• up-conversion mixer
• W-band

This letter reports the performance of a W-band (75-110 GHz) high gain double-balanced active up-conversion mixer fabricated in a low-cost 200 GHz f(T) and f(max) 0.18 mu m SiGe BiCMOS technology. Integrated on-chip baluns are used at RF and LO ports to facilitate on-wafer characterization. The mixer achieves a measured single sideband (SSB) power conversion gain of 6.6 dB and 3.2 dB at 75 GHz and 80 GHz, respectively. The measured output-referred 1 dB compression point (OP(1 dB)) is -4.8 dBm and -7.3 dBm at 75 GHz and 80 GHz, respectively. The overall chip area is 830 mu m x 690 mu m. The mixer draws a total of 31.5 mA from a nominal 3.3 V supply. To the best of authors' knowledge, this is the W-band active up-conversion mixer with the highest conversion gain reported among all prior published millimeter-wave silicon-based up-conversion mixers.

• 出版日期2011-6