MOVPE grown periodic AlN/BAIN heterostructure with high boron content

作者：Li X; Sundaram S; El Gmili Y; Genty F; Bouchoule S; Patriache G; Disseix P; Reveret F; Leymarie J; Salvestrini J P; Dupuis R D; Voss P L; Ougazzaden A^*

来源：Journal of Crystal Growth, 2015, 414: 119-122.

DOI：10.1016/j.jcrysgro.2014.09.030

• MOVPE
• III-nitrides
• Boron
• BAIN

Five-period AIN/BAIN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been observed by both SIMS profile and Z-contrast HAADF-STEM images. The BAIN layers demonstrate columnar polycrystalline feature. The BAIN layers exhibit an emission peak by CL and absorption edge in transmission spectra at around 260 rim. The results enable the development of BAIGaN based multi layered heterostructure for UV and deep UV applications.

• 出版日期2015-3-15