Dry etching characteristics of TiO2 thin films using inductively coupled plasma for gas sensing

作者：Hotovy I^*; Hascik S; Gregor M; Rehacek V; Predanocy M; Plecenik A

来源：Vacuum, 2014, 107: 20-22.

DOI：10.1016/j.vacuum.2014.03.025

• TiO2
• Dry etching
• Inductively coupled plasma
• X-ray photoelectron spectroscopy

In this work, the optimal characteristics of etching TiO2 films in an inductively coupled plasma system with CF4/Ar plasma were investigated. The maximum etch rate of TiO2 was 93 nm/min at fixed 200 W of inductively coupled plasma power and the highest investigated value of RF chuck power of 150 W. Using the X-ray photoelectron spectroscopy the chemical reactions between TiO2 and F were analysed. It was found that the etching mechanism included ion-stimulated desorption of reaction products on the TiO2 surface and formation of a solid solution and non-volatile TiF3.

• 出版日期2014-9
• 单位中国科学院电工研究所