A 1.65 W Fully Integrated 90 nm Bulk CMOS Capacitive DC-DC Converter With Intrinsic Charge Recycling

作者：Meyvaert Hans^*; Van Breussegem Tom; Steyaert Michiel

来源：IEEE Transactions on Power Electronics, 2013, 28(9): 4327-4334.

DOI：10.1109/TPEL.2012.2230339

• Capacitive
• DC-DC converter
• fully integrated
• intrinsic charge recycling (ICR)
• power converter
• switched capacitor

A fully integrated high power density capacitive 2: 1 step-down DC-DC converter is designed in a standard CMOS technology. The converter implements the presented flying well technique and intrinsic charge recycling technique to deliver a maximum output power of 1.65 W on a chip area of 2.14 mm(2), resulting in a power conversion density of 0.77 W/mm(2). A peak power conversion efficiency of 69% is achieved, leading to an efficiency enhancement factor of +36% with respect to a linear regulator. This is for a voltage step-down conversion from twice the nominal supply voltage of a 90 nm technology (2V(dd) = 2.4 V) to 1 V.

• 出版日期2013-9