AnImproved Methodology forAccurate Extraction of Ultra-Low Specific Contact Resistivity of Alloyed Contacts Using Nanoscale Transmission Line Method

作者：Wu Ying^*; Li Yang; Wang Wei; Gong Xiao^*; Yeo Yee Chia^*

来源：IEEE Electron Device Letters, 2018, 39(6): 803-806.

DOI：10.1109/LED.2018.2831712

• Specific contact resistivity
• recessed contacts
• effective transfer length

An effective transfer length (ETL) model is developed to accurately extract the specific contact resistivity rho(c) for alloyed or recessed contacts by accounting for the modification of sheet resistance of semiconductor under the contact (R-shc) and uneven contact interface due to the reaction of the contact metal and the semiconductor. This method is applied to an example where the formation of NiGeSn extends into p(+)-Ge0.95Sn0.05 region to form a recessed contact structure.

• 出版日期2018-6