An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET

作者：Wang, Ying^*; Tian, Kai; Hao, Yue; Yu, Cheng-Hao; Liu, Yan-Juan

来源：IEEE Transactions on Electron Devices, 2015, 62(9): 2774-2778.

DOI：10.1109/TED.2015.2449972

• 4H-SiC
• breakdown voltage (BV)
• gate-drain charge (Q(Gd))
• ON-state specific resistance (RON-sp)
• U-shaped trench gate MOSFET (UMOSFET)

In this paper, an optimized structure of 4H-SiC U-shaped trench gate MOSFET (UMOSFET) with low resistance is proposed. The optimized structure adds an n-type region, wrapping the p(+) shielding region incorporated at the bottom of the trench gate. The depletion region formed by the p(+) shielding region reduces greatly for the high dopant concentration of the added region. This added region also conducts electrons downward and expands the electrons to the bottom of the p(+) shielding region. We discussed the influence of dopant concentration and the width of the added region on the breakdown voltage (BV) and the ON-resistance in this paper. A reasonable size and an optimized concentration were chosen for the added region in our simulation. The channel inversion layer mobility was set to 50 cm(2)/Vs, and the specific ON-resistance and the BV were 1.64 m Omega . cm(2) (VGS = 15 V, V-DS = 1 V, and no substrate resistance was included) and 891 V, respectively, using the numerical simulation.

• 出版日期2015-9
• 单位西安交通大学; 哈尔滨工程大学; 西安电子科技大学