Dependence of catalytic properties of indium-implanted SiO2 thin films on the energy and dose of incident indium ions

作者：Yoshimura S^*; Kiuchi M; Nishimoto Y; Yasuda M; Baba A; Hamaguchi S

来源：Thin Solid Films, 2012, 520(15): 4894-4897.

DOI：10.1016/j.tsf.2012.03.028

• Indium
• Ion beam injection
• Ion energy
• SiO2 thin film
• Catalyst

Chemical substances that contain indium (In) and silicon (Si) in close proximity are known to catalyze certain organic chemical reactions. The previous study [S. Yoshimura, et al., Appl. Surf. Sci., 257 (2010) 192] has demonstrated that In implanted SiO2 thin films, formed under some specific conditions, contain In atoms on or near the substrate surface in close proximity with Si atoms and catalyze a reaction of benzhydrol with acetylacetone. In this study, dependence of the catalytic ability of an In implanted SiO2 thin film on the ion incident energy and dose for the In ion implantation process has been examined. It has been shown that a right combination of ion energy and ion dose must be selected in the film preparation process for the manifestation of the catalytic effect.

• 出版日期2012-5-31