X- and K-Band SiGe HBT LNAs With 1.2-and 2.2-dB Mean Noise Figures

作者：Kanar Tumay^*; Rebeiz Gabriel M

来源：IEEE Transactions on Microwave Theory and Techniques, 2014, 62(10): 2381-2389.

DOI：10.1109/TMTT.2014.2341218

• K-band
• low-noise amplifier (LNA)
• satellite communications
• SiGe HBT
• X-band

This paper presents low-noise amplifiers (LNA) at X- and K-band frequencies in a 0.18-mu m SiGe HBT technology. A method of noise match optimization with respect to base inductance in SiGe LNA design with large transistors is proposed. The measured X-and K-band LNAs result in 1.2-and 2.2-dB mean noise figure in their frequency bands, with an associated peak gain of 24.2 and 19 dB at 8.5 and 19.5 GHz, respectively. The measured IIP3 is -11 and -4 dBm at 10 and 20 GHz, for a power consumption of 32.8 mW(X-band LNA) and 22.5 mW(K-band LNA). To the authors' best knowledge, these results outperform all available CMOS designs and achieve the lowest mean noise figure at X- and K-bands in any SiGe or CMOS process. The main application areas are in low-noise receivers for terrestrial communication systems and low-cost radars.

• 出版日期2014-10