Fabrication of nano-cavity patterned sapphire substrate using self-assembly meshed Pt thin film on c-plane sapphire substrate

作者：Huang S W; Chang C C; Lin H Y; Li X F; Lin Y C; Liu C Y^*

来源：Thin Solid Films, 2017, 628: 127-131.

DOI：10.1016/j.tsf.2017.03.015

• Nano-cavities
• Quantum wells
• Gallium nitride
• Light emitting diodes

In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.

• 出版日期2017-4-30
• 单位中央民族大学