A Comparison of the Radiation Response of TaOx and TiO2 Memristors

作者：Hughart David R^*; Lohn Andrew J; Mickel Patrick R; Dalton Scott M; Dodd Paul E; Shaneyfelt Marty R; Silva Antoinette I; Bielejec Edward; Vizkelethy Gyorgy; Marshall Michael T; McLain Michael L; Marinella Matthew J

来源：IEEE Transactions on Nuclear Science, 2013, 60(6): 4512-4519.

DOI：10.1109/TNS.2013.2285516

• Displacement damage
• ionization
• memristor
• radiation effects
• resistive memory
• RRAM
• tantalum
• titanium

The effects of radiation on memristors created using tantalum oxide and titanium oxide are compared. Both technologies show changes in resistance when exposed to 800 keV Ta ion irradiation at fluences above 10(10) cm(-2). TaOx memristors show a gradual reduction in resistance at high fluences whereas TiO2 memristors show gradual increases in resistance with inconsistent decreases. After irradiation TaOx devices remain fully functional and can even recover resistance with repeated switching. TiO2 devices are more variable and exhibit significant increases and decreases in resistance when switching after irradiation. Irradiation with 28 MeV Si ions causes both technologies to switch from the off-state to the on-state when ionizing doses on the order of 60 Mrad(Si) or greater (as calculated by SRIM) are reached without applying current or voltage to the part. Irradiation with 10 keV X-rays up to doses of 18 Mrad(Si) in a single step show little effect on either technology. TaOx and TiO2 memristors both show high tolerance for displacement damage and ionization damage and are promising candidates for future radiation-hardened non-volatile memory applications.

• 出版日期2013-12