Amorphous Silicon Nanowires Grown on Silicon Oxide Film by Annealing

作者：Yuan, Zhishan^*; Wang, Chengyong; Chen, Ke; Ni, Zhonghua; Chen, Yunfei

来源：Nanoscale Research Letters, 2017, 12(1): 487.

DOI：10.1186/s11671-017-2251-1

• alpha-SiNWs
• Cu patterns
• Annealing time
• Resistivity

In this paper, amorphous silicon nanowires (alpha-SiNWs) were synthesized on (100) Si substrate with silicon oxide film by Cu catalyst-driven solid-liquid-solid mechanism (SLS) during annealing process (1080 degrees C for 30 min under Ar/H-2 atmosphere). Micro size Cu pattern fabrication decided whether alpha-SiNWs can grow or not. Meanwhile, those micro size Cu patterns also controlled the position and density of wires. During the annealing process, Cu pattern reacted with SiO2 to form Cu silicide. More important, a diffusion channel was opened for Si atoms to synthesis a-SiNWs. What is more, the size of alpha-SiNWs was simply controlled by the annealing time. The length of wire was increased with annealing time. However, the diameter showed the opposite tendency. The room temperature resistivity of the nanowire was about 2.1 x 10(3) Omega.cm (84 nm diameter and 21 mu m length). This simple fabrication method makes application of a-SiNWs become possible.

• 出版日期2017-8-10
• 单位广东工业大学; 东南大学