AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate

作者：Abidri B; Ghaffour M^*; Abdellaoui A; Bouslama M; Hiadsi S; Monteil Y

来源：Applied Surface Science, 2010, 256(10): 3007-3009.

DOI：10.1016/j.apsusc.2009.11.021

• AES
• LEED
• PYS
• InSe
• Interface
• Au

Auger Electron Spectroscopy (AES), Low Energy Electron Diffraction (LEED) and Photoelectron Yield Spectroscopy (PYS) measurements have been used to monitor the interaction of gold (Au) deposits on InSe/Si(1 1 1) substrate. Au has been sequentially deposed under ultra-high vacuum onto 40 angstrom-thick film of layered semiconductor InSe which is epitaxially grown by molecular beam epitaxy (MBE) on a Si(1 1 1) 1 x 1-H substrate and kept at room temperature. Au coverage varies from 0.5 monolayer to 20 monolayers (ML) (in terms of InSe atomic surface plane: 1 ML = 7.2 1014 at/cm(2)) which is corresponding to 1.30 angstrom of Au-metal. The Au/InSe/Si(1 1 1) system was characterized as function of Au deposit, we noticed an interaction at room temperature starts as an apparent intercalation process until 5 ML. Beyond this dose Au islands begin to form on the sample surface without interaction with InSe substrate, thus the interface is far from to be a simple junction Au-InSe.

• 出版日期2010-3-1