Preparation of Al-doped ZnO thin film deposited at room temperature

作者：Rim You Seung; Kim Sang Mo; Choi Hyung Wook; Park Sang Joon; Kim Kyung Hwan^*

来源：Colloids and Surfaces A: Physicochemical and Engineering Aspects , 2008, 313: 461-464.

DOI：10.1016/j.colsurfa.2007.04.138

• ZnO
• AZO
• thin film
• FTS
• sputtering
• PES

Al-doped ZnO (AZO) thin films were prepared at room temperature using a novel facing targets sputtering (FTS) method. The coming glass (2948) and polyethersulfone, (PES) of 200 mu m in thickness were used as substrates. In the work, we evaluated the influence of O-2 gas flow rate and investigated the optical, structural and electrical properties of AZO thin films as a function of O-2 gas flow rate. From the results, it was found that AZO thin films oriented in the (0 0 2) direction were obtained regardless of substrate type and O-2 gas flow rate. In addition, the resistivity of AZO thin film deposited on both substrates increased with the increase of O-2 gas flow rate. All AZO thin films except the films deposited on glass substrate at O-2 gas flow rate of 0.1 were shown an average transmittance over 80% in visible range (400-800 nm). We could obtain AZO thin films with the low resistivity (2.4 x 10(-3) Omega cm:glass, 4.4 x 10(-3) Omega cm:PES) and high transmittance (over 80%) under the optimal conditions.

• 出版日期2008-2-1