Ultrafast Crystallization of Amorphous Silicon Thin Films by Using an Electron Beam Annealing Method

作者：Kim Changheon^*; Lim Sangwoo; Jeong Chaehwan

来源：Journal of the Korean Physical Society, 2014, 64(8): 1091-1095.

DOI：10.3938/jkps.64.1091

• Amorphous silicon
• Thin films
• Electron-beam annealing
• Structural properties
• X-ray diffraction

An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (X-c) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.

• 出版日期2014-4