Annealing effect of the InAs dot-in-well structure grown by MBE

作者：Zhao, Xuyi; Wang, Peng; Cao, Chunfang; Yan, Jinyi; Zha, Fangxing; Wang, Hailong; Gong, Qian^*

来源：Journal of Crystal Growth, 2017, 480: 115-118.

DOI：10.1016/j.jcrysgro.2017.10.020

• Photoluminescence
• Quantum dots
• Molecular beam epitaxy
• Semiconducting III-V materials
• Heterojunction semiconductor devices

We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 mu m InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ, simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 degrees C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 degrees C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

• 出版日期2017-12-15
• 单位上海大学; 中国科学院; 信息功能材料国家重点实验室; 曲阜师范大学; 中国科学院上海微系统与信息技术研究所