摘要
This paper presents a high efficient dual-frequency Doherty power amplifier(DPA). By optimizing the circuit, simulating circuits through Advanced Design System(ADS), we analysis and design a Doherty power amplifier of working frequencies of O.9GHz and 2.35GHz, whose maximum output powers were respectively 44.1dBm and 44.3dBm. The amplifier has the power-added efficiency(PAE) of 65.3% and 54.2% when the output power is 6dB back off, and has the PAE of 64.1% and 68.3% when the output power is saturated. the efficiency of which is also improved compared with the conventional DPA. Implemented DPA using two Cree's CGH40010 gallium nitride(GaN) high electron mobility transistor(HEMT).
- 出版日期2018
- 单位华南理工大学