Neural approach for temperature-dependent modeling of GaN HEMTs

作者：Marinkovic Zlatica^*; Crupi Giovanni; Caddemi Alina; Avolio Gustavo; Raffo Antonio; Markovic Vera; Vannini Giorgio; Schreurs Dominique M M P

来源：International Journal of Numerical Modelling: Electronic Networks, Devices and Fields , 2015, 28(4): 359-370.

DOI：10.1002/jnm.2011

• artificial neural networks
• GaN technology
• HEMT
• microwave measurements
• multi-bias
• temperature

Gallium nitride high electron-mobility transistors have gained much interest for high-power and high-temperature applications at high frequencies. Therefore, there is a need to have the dependence on the temperature included in their models. To meet this challenge, the present study presents a neural approach for extracting a multi-bias model of a gallium nitride high electron-mobility transistors including the dependence on the ambient temperature. Accuracy of the developed model is verified by comparing modeling results with measurements.

• 出版日期2015-8