Size effects in band gap bowing in nitride semiconducting alloys

作者：Gorczyca I^*; Suski T; Christensen N E; Svane A

来源：Physical Review B, 2011, 83(15): 153301.

DOI：10.1103/PhysRevB.83.153301

Chemical and size contributions to the band gap bowing of nitride semiconducting alloys (In(x)Ga(1-x)N, In(x)Al(1-x)N, and Al(x)Ga(1-x)N) are analyzed. It is shown that the band gap deformation potentials of the binary constituents determine the gap bowing in the ternary alloys. The particularly large gap bowing in In-containing nitride alloys can be explained by specific properties of InN, which do not follow trends observed in several other binaries.

• 出版日期2011-4-4