Alloyed 2D Metal-Semiconductor Atomic Layer Junctions

作者：Kim Ah Ra; Kim Yonghun; Nam Jaewook; Chung Hee Suk; Kim Dong Jae; Kwon Jung Dae; Park Sang Won; Park Jucheol; Choi Sun Young; Lee Byoung Hun; Park Ji Hyeon; Lee Kyu Hwan; Kim Dong Ho; Choi Sung Mook; Ajayan Pulickel M^*; Hahm Myung Gwan^*; Cho Byungjin^*

来源：Nano Letters, 2016, 16(3): 1890-1895.

DOI：10.1021/acs.nanolett.5b05036

• Transition metal dichalcogenide
• WSe2
• NbSe2
• heterostructure
• atomic-layered FET

Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe2 atomic layer channels and metallic NbSe2 contact layers can be engineered through interfacial doping with Nb atoms. WxNb1-xSe2 interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe2-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.

• 出版日期2016-3