Near-field microwave microscopy of high-kappa oxides grown on graphene with an organic seeding layer

作者：Tselev Alexander^*; Sangwan Vinod K; Jariwala Deep; Marks Tobin J; Lauhon Lincoln J; Hersam Mark C; Kalinin Sergei V

来源：Applied Physics Letters, 2013, 103(24): 243105.

DOI：10.1063/1.4847675

Near-field scanning microwave microscopy (SMM) is used for non-destructive nanoscale characterization of Al2O3 and HfO2 films grown on epitaxial graphene on SiC by atomic layer deposition using a self-assembled perylene-3,4,9,10-tetracarboxylic dianhydride seeding layer. SMM allows imaging of buried inhomogeneities in the dielectric layer with a spatial resolution close to 100 nm. The results indicate that, while topographic features on the substrate surface cannot be eliminated as possible sites of defect nucleation, the use of a vertically heterogeneous Al2O3/ HfO2 stack suppresses formation of large outgrowth defects in the oxide film, ultimately improving lateral uniformity of the dielectric film.

• 出版日期2013-12-9
• 单位西北大学