Na effect on flexible Cu(In,Ga)Se-2 photovoltaic cell depending on diffusion barriers (SiOx, i-ZnO) on stainless steel

作者：Lee Woo Jung; Cho Dae Hyung; Wi Jae Hyung; Han Won Seok; Kim Jeha; Chung Yong Duck^*

来源：Materials Chemistry and Physics, 2014, 147(3): 783-787.

DOI：10.1016/j.matchemphys.2014.06.021

• Chalcogenides
• Thin films
• Secondary ion mass spectroscopy
• Diffusion

Cu(In,Ga)Se-2 (CIGS) based-photovoltaic (PV) cells with different diffusion barriers of SiOx and i-ZnO were fabricated on stainless steel (STS) substrate and their electrical characteristics were investigated by measuring J-V curves under illuminated and dark conditions. The physical properties of the CIGS film depending on type of diffusion barrier were also analyzed using X-ray diffraction and secondary ion mass spectroscopy. The efficiency of the CIGS-PV cell with i-ZnO barrier was approximately 2% higher than that with the SiOx barrier. Through the analysis of dark J-V curves, we discovered that distinctive defects were formed in the band gap of CIGS based on which diffusion barrier contacted the STS. The diffraction pattern showed a slightly different tendency of the peak intensity ratio of (220/204)/(112) in the PV cell with the i-ZnO barrier, which was slightly higher than that in the PV cell with SiOx barrier. In elemental depth profile, a deficient Ga profile was observed near the surface of the CIGS film with the SiOx barrier, and an abundant Na profile within the CIGS film with the i-ZnO barrier was detected. This is attributed to a difference in thermal conduction through the diffusion barriers during CIGS film growth, originating from the larger thermal conductivity of ZnO compared with SiOx.

• 出版日期2014-10-15