摘要
The experimental tests of dose rate and annealing effects on array charge-coupled devices (CCDs) are presented. The saturation output voltage (V-S) versus the total dose at the dose rates of 0.01, 0.1, 1.0, 10.0 and 50 rad(Si)/s are compared. Annealing tests are performed to eliminate the time-dependent effects. The V-S degradation levels depend on the dose rates. The V-S degradation mechanism induced by dose rate and annealing effects is analyzed. The V-S at 20 krad(Si) with the dose rate of 0.03 rad(Si)/s are supplemented to assure the degradation curves between the dose rates of 0.1 and 0.01 rad(Si)/s. The CCDs are divided into two groups, with one group biased and the other unbiased during Co-60 gamma radiation. The V-S degradation levels of the biased CCDs during radiation are more severe than that of the unbiased CCDs.
- 出版日期2015-10
- 单位西北核技术研究所