Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

作者：Uznanski Slawosz^*; Gasiot Gilles; Roche Philippe; Autran Jean Luc; Dugoujon Laurent

来源：IEEE Transactions on Nuclear Science, 2011, 58(6): 2652-2657.

DOI：10.1109/TNS.2011.2170852

• Dual-interlocked storage cell (DICE)
• heavy ion SEU cross-section
• Monte-Carlo simulation
• radiation hardened by design (RHBD)
• static random-access memory (SRAM)
• tool suite for radiation reliability assessment (TIARA)

Heavy ion experimental test results carried out on static random-access memories (SRAMs) manufactured in bulk complementary metal-oxide semiconductor (CMOS) 32 nm are compared to Monte Carlo simulations. Additional simulation capabilities allow for insight in heavy ion cross-section variations as a function of temperature, power supply voltage, and process corners. Monte Carlo simulations of a radiation-hardened-by-design flip-flop based on a dual-interlocked storage cell latch have been performed and show similar sensitivities for 65 nm and 32 nm technologies. Finally, for the first time, the heavy-ion cross-section of the 20 nm bulk CMOS SRAMs is anticipated by simulation by using the latest available technology data.

• 出版日期2011-12