摘要

A novel low-temperature polycrystalline-silicon thin-film-transistor pixel circuit for 3D active-matrix organic light-emitting diode (AMOLED) displays is presented in this work. The proposed pixel circuit employs high frame rate (240 Hz) emission driving scheme and only needs 3.5 s for input data period. Thus, 3D AMOLED displays can be realized under high speed operations. The simulation results demonstrate excellent stability in the proposed pixel circuit. The relative current error rate is only 0.967% under the threshold voltage deviation (Delta(VTH_DTFT) = +/-0.33 V) of driving TFT. With an OLED threshold voltage detecting architecture, the OLED current can be increased with the increased OLED threshold voltage to compensate for the OLED luminance degradation. The proposed pixel circuit can therefore effectively compensate for the DTFT threshold voltage shift and OLED electric degradation at the same time.

  • 出版日期2016-5