Antiferromagnetic half-metals, gapless half-metals, and spin gapless semiconductors: The D0(3)-type Heusler alloys

作者：Gao G Y^*; Yao Kai Lun

来源：Applied Physics Letters, 2013, 103(23): 232409.

DOI：10.1063/1.4840318

High-spin-polarization materials are desired for the realization of high-performance spintronic devices. We combine recent experimental and theoretical findings to theoretically design several high-spin-polarization materials in binary D0(3)-type Heusler alloys: gapless (zero-gap) half-metallic ferrimagnets of V3Si and V3Ge, half-metallic antiferromagnets of Mn3Al and Mn3Ga, half-metallic ferrimagnets of Mn3Si and Mn3Ge, and a spin gapless semiconductor of Cr3Al. The high spin polarization, zero net magnetic moment, zero energy gap, and slight disorder compared to the ternary and quaternary Heusler alloys make these binary materials promising candidates for spintronic applications. All results are obtained by the electronic structure calculations from first-principles.

• 出版日期2013-12-2
• 单位华中科技大学