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摘要
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 degrees C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of similar to 2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.
- 出版日期2007-5
