Nanomechanical Response of the Si Lattice to Hydrogen Implantation and Annealing for Layer Splitting

作者：Gu Diefeng^*; Baumgart Helmut; Bourdelle Konstantin K; Celler George K; Elmustafa A A

来源：Japanese Journal of Applied Physics, 2009, 48(10): 101202.

DOI：10.1143/JJAP.48.101202

We studied the effect of hydrogen implantation into Si and the nanomechanical response to defect interaction, which is responsible for wafer splitting during the Smart Cut (TM) layer transfer of (001) oriented Si wafers. Hardness and modulus of H implanted Si samples were measured by nanoindentation technique before and after thermal annealing. A significant weakening of the hardness and elastic modulus of the single crystalline Si lattice in the H implantation-induced damage zone following annealing was observed. Cross-sectional transmission electron microscopy revealed that the majority of extended defects consist of platelets, which developed parallel to the (001) Si surface during annealing.

• 出版日期2009-10