Deep Understanding of Retention Characteristics in Various Conditions in Sub 20-nm NAND Flash Memory

作者：Lee Kyunghwan; Kang Myounggon; Shin Hyungcheol^*

来源：Journal of Nanoscience and Nanotechnology, 2017, 17(5): 3155-3159.

DOI：10.1166/jnn.2017.14041

• Activation Energy (E-a)
• Lifetime Estimation
• Retention Time
• Arrhenius Model
• P/E Cycling Stress
• Criterion of Delta V-th Total
• probability level (P-level)

Misunderstanding on apparent activation energy (E-aa) can cause serious error in the lifetime predictions of NAND flash memory. In this paper, we extract E-aa and investigate the abnormal retention characteristics in various conditions for sub 20-nm NAND flash memory. The results show that the contribution rate (CR) of the dominant mechanisms for total charge loss has non-uniform behavior according to the temperature. In high-temperature (HT) regime, the Nit recovery mechanism is dominant, while the TAT mechanism becomes dominant in low-temperature (LT) regime. This non-uniform behavior, especially the CR' trend of the TAT mechanism, makes the E-aa roll-off characteristics in the Arrhenius plot.

• 出版日期2017-5